Magnetically-Assisted Statistical Assembly - a new heterogeneous integration technique

This paper presents a new technique for the monolithic heterogeneous integration of compound semiconductor devices with silicon integrated circuits, and establishes the theoretical foundation for a key element of the process, tailored magnetic attraction and retention. It is shown how a patterned thin film of hard magnetic material can be used to engineer the attraction between the film and nanopills covered with a soft magnetic material. With a suitable choice of pattern, it is anticipated that it will be possible to achieve complete filling of recesses in the surface of fully-processed integrated circuit wafers, preparatory to subsequent processing to fabricate the nanopills into heterostructure devices integrated monolithically with the pre-existing electronics.Singapore-MIT Alliance (SMA

High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth

High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode.Singapore-MIT Alliance (SMA

Optics and Quantum Electronics

Contains reports on nine research projects split into two sections.National Science Foundation (Grant DAR80-08752)National Science Foundation (Grant ECS79-19475)Joint Services Electronics Program (Contract DAAG29-83-K-0003)National Science Foundation (Grant ECS80-20639)National Science Foundation (Grant ECS82-11650

Two-dimensional Photonic Crystals Fabricated by Nanoimprint Lithography

We report on the process parameters of nanoimprint lithography (NIL) for the fabrication of two-dimensional (2-D) photonic crystals. The nickel mould with 2-D photonic crystal patterns covering the area up to 20mm² is produced by electron-beam lithography (EBL) and electroplating. Periodic pillars as high as 200nm to 250nm are produced on the mould with the diameters ranging from 180nm to 400nm. The mould is employed for nanoimprinting on the poly-methyl-methacrylate (PMMA) layer spin-coated on the silicon substrate. Periodic air holes are formed in PMMA above its glass-transition temperature and the patterns on the mould are well transferred. This nanometer-size structure provided by NIL is subjective to further pattern transfer.Singapore-MIT Alliance (SMA

GaN Nanopore Arrays: Fabrication and Characterization

GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN surface by evaporating an Al film onto a GaN epilayer and subsequently anodizing the aluminum. To minimize plasma-induced damage, the template was exposed to CF4-based plasma conditions. Scanning electron microscopy (SEM) analysis shows that the diameter and the periodicity of the nanopores in the GaN were directly transferred from the original anodic alumina template. The pore diameter in the AAO film can be easily controlled by tuning the anodization conditions. Atomic force microscopy (AFM), photoluminescence (PL) and micro-Raman techniques were employed to assess the quality of the etched GaN nanopore surface. Such a cost-effective method to produce nano-patterned GaN template would be useful for growth and fabrication of III-Nitrides based nanostructures and photonic band gap materials.Singapore-MIT Alliance (SMA

GaN Based Nanomaterials Fabrication with Anodic Aluminium Oxide by MOCVD

A highly self-ordered hexagonal array of cylindrical pores has been fabricated by anodizing a thin film of Al on substrate and subsequent growth of GaN and InGaN in these nanoholes has been performed. This AAO template-based synthesis method provides a low cost process to fabricate GaN-based nanomaterials fabrication.Singapore-MIT Alliance (SMA

Close-Packed Silicon Microelectrodes for Scalable Spatially Oversampled Neural Recording

Objective: Neural recording electrodes are important tools for understanding neural codes and brain dynamics. Neural electrodes that are closely packed, such as in tetrodes, enable spatial oversampling of neural activity, which facilitates data analysis. Here we present the design and implementation of close-packed silicon microelectrodes to enable spatially oversampled recording of neural activity in a scalable fashion. Methods: Our probes are fabricated in a hybrid lithography process, resulting in a dense array of recording sites connected to submicron dimension wiring. Results: We demonstrate an implementation of a probe comprising 1000 electrode pads, each 9 × 9 μm, at a pitch of 11 μm. We introduce design automation and packaging methods that allow us to readily create a large variety of different designs. Significance: We perform neural recordings with such probes in the live mammalian brain that illustrate the spatial oversampling potential of closely packed electrode sites.Massachusetts Institute of Technology. Simons Center for the Social BrainNational Institutes of Health (U.S.) (NIH Director’s Pioneer Award DP1NS087724)National Institutes of Health (U.S.) (NIH Grant R01NS067199)National Institutes of Health (U.S.) (NIH grant Grant 2R44NS070453- 03A1)National Institutes of Health (U.S.) (NIH Grant R01DA029639)National Science Foundation (U.S.) (Cognitive Rhythms Collaborative, NSF DMS 1042134)Institution of Engineering and Technology (IET) (Harvey Prize)New York Stem Cell FoundationNational Institutes of Health (U.S.) (NIH grant CBET 1053233)United States. Defense Advanced Research Projects Agency (DARPA Grant HR0011-14-2-0004)Paul G. Allen Family Foundatio

High-Frequency (> 100 GHz) Electronic Devices

Contains reports on five research projects and a list of publications.MIT Lincoln LaboratoryNational Aeronautics and Space Administration Grant NAG2-693National Science Foundation Grant ECS 91-09330Defense Advanced Research Projects Agency Contract MDA972-90-C-0021U.S. Army - Research Office Grant DAAL03-92-G-025

Quantum Electronics

Contains report on ten research projects split into three sections.Joint Services Electronics Program (Contract DAAG29-78-C-0020)National Science Foundation (Grant PHY77-07156)U. S. Air Force-Office of Scientific Research (Grant AFOSR-3042)National Science Foundation (Grant ENG77-24981